A recent discovery in spintronics could potentially transform future electronics. A group of researchers have revealed the key role of cobalt-tin-sulfur in reducing energy consumption, unlocking new possibilities for high-speed, low-power spintronic devices.
A group of researchers have made a significant breakthrough which could revolutionize next-generation electronics by enabling non-volatility, large-scale integration, low power consumption, high speed, and high reliability in spintronic devices.Spintronic devices, represented by magnetic random access memory , utilize the magnetization direction of ferromagnetic materials for information storage and rely on spin current, a flow of spin angular momentum, for reading and writing data.
A promising method for mitigating energy consumption during information writing is the utilization of the spin Hall effect, where spin angular momentum flows transversely to the electric current. The challenge lies in identifying materials that exhibit a significant spin Hall effect, a task that has been clouded by a lack of clear guidelines.