'Approximately 200,000 times thinner than human hair.'
New energy-efficient devices are made possible by the thinnest ferroelectric material ever created, thanks to the University of California Berkeley and Argonne National Laboratory.
As a result of this development, intriguing material behavior at small scales could reduce energy demands for computing, revealedThe Department of Energy's Argonne National Laboratory has discovered a solution that overcomes both difficulties at the same time by fabricating the thinnest ferroelectric ever reported as well as the thinnest demonstration of working memory on silicon.
“This greatly expands the materials design space for next-generation electronics to include materials already compatible with silicon technologies.” This work was led by Cheema and Sayeef Salahuddin of UC Berkeley, along with co-first authors Nirmaan Shanker and Shang-Lin Hsu.The critical size limit of voltage-switchable electric dipoles has extensive implications for energy-efficient electronics, underlying the importance of ferroelectric order stabilized at reduced dimensionality. We report on the thickness-dependent antiferroelectric-to-ferroelectric phase transition in zirconium dioxide thin films on silicon.
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